IndiumV3, Main, Repository, bibRecord, 000649

Properties of In2O3 films obtained by thermal oxidation of sprayed In2S3

Identifieur interne : 000649 ( Main/Repository ); précédent : 000648; suivant : 000650

Properties of In2O3 films obtained by thermal oxidation of sprayed In2S3

Auteurs : RBID : Pascal:13-0363151

Descripteurs français

Pascal (Inist)
- Oxydation, Dépôt projection, Technologie CSP, Thiourée, Epaisseur, Recuit, Diffraction RX, Spectre RX, Polycristal, Cristal cubique, Grosseur grain, Granulométrie, Valeur efficace, Transparence, Bande interdite, Effet Hall, Température ambiante, Conductivité électrique, Densité porteur charge, Microscopie force atomique, Microscopie électronique balayage, Oxyde d'indium, Sulfure d'indium, Couche mince, Indium, Oxyde de silicium, Oxygène, Nanocristal, Réseau cubique, Matériau transparent, Matériau cristallin, Assemblage circuit intégré, 6146, 7363, 6837P, 0779, In2O3, In2S3, SiO2, Pyrolyse par projection.
Wicri :
- concept : Oxygène.

English descriptors

KwdEn :
- Annealing, Atomic force microscopy, Charge carrier density, Chip scale packaging, Crystalline material, Cubic crystals, Cubic lattices, Electrical conductivity, Energy gap, Grain size, Grain size analysis, Hall effect, Indium, Indium oxide, Indium sulfide, Integrated circuit bonding, Nanocrystal, Oxidation, Oxygen, Polycrystal, Room temperature, Root mean square value, Scanning electron microscopy, Silicon oxides, Spray coating, Spray pyrolysis, Thickness, Thin film, Thiourea, Transparency, Transparent material, X ray diffraction, X ray spectrum.

Abstract

In₂S₃ thin films were grown by the chemical spray pyrolysis (CSP) method using indium chloride and thiourea as precursors at a molar ratio of S:In=2.5. The deposition was carried out at 350 °C on quartz substrates. The film thickness is about 1 μm. The films were then annealed for 2 h at 550, 600, 650 and 700 C in oxygen flow. This process allows the transformation of nanocrystal In₂O₃ from In₂S₃ and the reaction is complete at 600 °C. X-ray diffraction spectra show that In₂O₃ films are polycrystalline with a cubic phase and preferentially oriented towards (222). The film grain size increases from 19 to 25 nm and RMS values increase from 9 to 30 nm. In₂O₃ films exhibit transparency over 70-85% in the visible and infrared regions due to the thickness and crystalline properties of the films. The optical band gap is found to vary in the range 3.87-3.95 eV for direct transitions. Hall effect measurements at room temperature show that resistivity is decreased from 117 to 27 Ω cm. A carrier concentration of 1 x 10¹⁶cm^-3 and mobility of about 117 cm² V^-1 s^-1 are obtained at 700 °C.

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Links to Exploration step

Pascal:13-0363151

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Properties of In<sub>2</sub>
O<sub>3</sub>
 films obtained by thermal oxidation of sprayed In<sub>2</sub>
S<sub>3</sub>
</title>
<author><name sortKey="Kraini, M" uniqKey="Kraini M">M. Kraini</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratoire de Physique des Matériaux et des Nanomatériaux appliquée à l'Environnement, Faculté des Sciences de Gabès</s1>
<s2>Cité Erriadh Manara Zrig 6072 Gabès</s2>
<s3>TUN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Tunisie</country>
<wicri:noRegion>Cité Erriadh Manara Zrig 6072 Gabès</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Bouguila, N" uniqKey="Bouguila N">N. Bouguila</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratoire de Physique des Matériaux et des Nanomatériaux appliquée à l'Environnement, Faculté des Sciences de Gabès</s1>
<s2>Cité Erriadh Manara Zrig 6072 Gabès</s2>
<s3>TUN</s3>
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<sZ>2 aut.</sZ>
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<author><name sortKey="Halidou, I" uniqKey="Halidou I">I. Halidou</name>
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<author><name sortKey="Timoumi, A" uniqKey="Timoumi A">A. Timoumi</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Laboratoire de Photovoltaïque et Matériaux Semiconducteurs, Département de Génie Industriel, Ecole Nationale d'Ingénieurs de Tunis, PB 37</s1>
<s2>Le Belvédère 1002</s2>
<s3>TUN</s3>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Tunisie</country>
<wicri:noRegion>Le Belvédère 1002</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Alaya, S" uniqKey="Alaya S">S. Alaya</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratoire de Physique des Matériaux et des Nanomatériaux appliquée à l'Environnement, Faculté des Sciences de Gabès</s1>
<s2>Cité Erriadh Manara Zrig 6072 Gabès</s2>
<s3>TUN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Tunisie</country>
<wicri:noRegion>Cité Erriadh Manara Zrig 6072 Gabès</wicri:noRegion>
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<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0363151 INIST</idno>
<idno type="RBID">Pascal:13-0363151</idno>
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<term>Atomic force microscopy</term>
<term>Charge carrier density</term>
<term>Chip scale packaging</term>
<term>Crystalline material</term>
<term>Cubic crystals</term>
<term>Cubic lattices</term>
<term>Electrical conductivity</term>
<term>Energy gap</term>
<term>Grain size</term>
<term>Grain size analysis</term>
<term>Hall effect</term>
<term>Indium</term>
<term>Indium oxide</term>
<term>Indium sulfide</term>
<term>Integrated circuit bonding</term>
<term>Nanocrystal</term>
<term>Oxidation</term>
<term>Oxygen</term>
<term>Polycrystal</term>
<term>Room temperature</term>
<term>Root mean square value</term>
<term>Scanning electron microscopy</term>
<term>Silicon oxides</term>
<term>Spray coating</term>
<term>Spray pyrolysis</term>
<term>Thickness</term>
<term>Thin film</term>
<term>Thiourea</term>
<term>Transparency</term>
<term>Transparent material</term>
<term>X ray diffraction</term>
<term>X ray spectrum</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Oxydation</term>
<term>Dépôt projection</term>
<term>Technologie CSP</term>
<term>Thiourée</term>
<term>Epaisseur</term>
<term>Recuit</term>
<term>Diffraction RX</term>
<term>Spectre RX</term>
<term>Polycristal</term>
<term>Cristal cubique</term>
<term>Grosseur grain</term>
<term>Granulométrie</term>
<term>Valeur efficace</term>
<term>Transparence</term>
<term>Bande interdite</term>
<term>Effet Hall</term>
<term>Température ambiante</term>
<term>Conductivité électrique</term>
<term>Densité porteur charge</term>
<term>Microscopie force atomique</term>
<term>Microscopie électronique balayage</term>
<term>Oxyde d'indium</term>
<term>Sulfure d'indium</term>
<term>Couche mince</term>
<term>Indium</term>
<term>Oxyde de silicium</term>
<term>Oxygène</term>
<term>Nanocristal</term>
<term>Réseau cubique</term>
<term>Matériau transparent</term>
<term>Matériau cristallin</term>
<term>Assemblage circuit intégré</term>
<term>6146</term>
<term>7363</term>
<term>6837P</term>
<term>0779</term>
<term>In2O3</term>
<term>In2S3</term>
<term>SiO2</term>
<term>Pyrolyse par projection</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Oxygène</term>
</keywords>
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<front><div type="abstract" xml:lang="en">In<sub>2</sub>
S<sub>3</sub>
 thin films were grown by the chemical spray pyrolysis (CSP) method using indium chloride and thiourea as precursors at a molar ratio of S:In=2.5. The deposition was carried out at 350 °C on quartz substrates. The film thickness is about 1 μm. The films were then annealed for 2 h at 550, 600, 650 and 700 C in oxygen flow. This process allows the transformation of nanocrystal In<sub>2</sub>
O<sub>3</sub>
 from In<sub>2</sub>
S<sub>3</sub>
 and the reaction is complete at 600 °C. X-ray diffraction spectra show that In<sub>2</sub>
O<sub>3</sub>
 films are polycrystalline with a cubic phase and preferentially oriented towards (222). The film grain size increases from 19 to 25 nm and RMS values increase from 9 to 30 nm. In<sub>2</sub>
O<sub>3</sub>
 films exhibit transparency over 70-85% in the visible and infrared regions due to the thickness and crystalline properties of the films. The optical band gap is found to vary in the range 3.87-3.95 eV for direct transitions. Hall effect measurements at room temperature show that resistivity is decreased from 117 to 27 Ω cm. A carrier concentration of 1 x 10<sup>16 </sup>
cm<sup>-3</sup>
 and mobility of about 117 cm<sup>2</sup>
 V<sup>-1</sup>
 s<sup>-1</sup>
 are obtained at 700 °C.</div>
</front>
</TEI>
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<fA06><s2>6</s2>
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<fA08 i1="01" i2="1" l="ENG"><s1>Properties of In<sub>2</sub>
O<sub>3</sub>
 films obtained by thermal oxidation of sprayed In<sub>2</sub>
S<sub>3</sub>
</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>KRAINI (M.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>BOUGUILA (N.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>HALIDOU (I.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>TIMOUMI (A.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>ALAYA (S.)</s1>
</fA11>
<fA14 i1="01"><s1>Laboratoire de Physique des Matériaux et des Nanomatériaux appliquée à l'Environnement, Faculté des Sciences de Gabès</s1>
<s2>Cité Erriadh Manara Zrig 6072 Gabès</s2>
<s3>TUN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Unité de Recherches sur les Hétéro-Epitaxies et Applications (URHEA), Faculté des Sciences</s1>
<s2>5000 Monastir</s2>
<s3>TUN</s3>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Laboratoire de Photovoltaïque et Matériaux Semiconducteurs, Département de Génie Industriel, Ecole Nationale d'Ingénieurs de Tunis, PB 37</s1>
<s2>Le Belvédère 1002</s2>
<s3>TUN</s3>
<sZ>4 aut.</sZ>
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<fA20><s1>1388-1396</s1>
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<fA66 i1="01"><s0>GBR</s0>
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<fC01 i1="01" l="ENG"><s0>In<sub>2</sub>
S<sub>3</sub>
 thin films were grown by the chemical spray pyrolysis (CSP) method using indium chloride and thiourea as precursors at a molar ratio of S:In=2.5. The deposition was carried out at 350 °C on quartz substrates. The film thickness is about 1 μm. The films were then annealed for 2 h at 550, 600, 650 and 700 C in oxygen flow. This process allows the transformation of nanocrystal In<sub>2</sub>
O<sub>3</sub>
 from In<sub>2</sub>
S<sub>3</sub>
 and the reaction is complete at 600 °C. X-ray diffraction spectra show that In<sub>2</sub>
O<sub>3</sub>
 films are polycrystalline with a cubic phase and preferentially oriented towards (222). The film grain size increases from 19 to 25 nm and RMS values increase from 9 to 30 nm. In<sub>2</sub>
O<sub>3</sub>
 films exhibit transparency over 70-85% in the visible and infrared regions due to the thickness and crystalline properties of the films. The optical band gap is found to vary in the range 3.87-3.95 eV for direct transitions. Hall effect measurements at room temperature show that resistivity is decreased from 117 to 27 Ω cm. A carrier concentration of 1 x 10<sup>16 </sup>
cm<sup>-3</sup>
 and mobility of about 117 cm<sup>2</sup>
 V<sup>-1</sup>
 s<sup>-1</sup>
 are obtained at 700 °C.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D11E01</s0>
</fC02>
<fC02 i1="02" i2="X"><s0>001D11C06</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B80A15R</s0>
</fC02>
<fC02 i1="04" i2="X"><s0>001D11C02A</s0>
</fC02>
<fC02 i1="05" i2="X"><s0>240</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Oxydation</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Oxidation</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="GER"><s0>Oxidation</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Oxidación</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Dépôt projection</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Spray coating</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="GER"><s0>Spritzbeschichten</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Depósito proyección</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Technologie CSP</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Chip scale packaging</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Thiourée</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Thiourea</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Tiourea</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Epaisseur</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Thickness</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="GER"><s0>Dicke</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Espesor</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Recuit</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Annealing</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="GER"><s0>Gluehen</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Recocido</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Diffraction RX</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>X ray diffraction</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="GER"><s0>Roentgenbeugung</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Difracción RX</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Spectre RX</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>X ray spectrum</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Espectro RX</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Polycristal</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Polycrystal</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="GER"><s0>Polykristall</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Policristal</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Cristal cubique</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Cubic crystals</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="GER"><s0>Kubische Struktur</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Cristal cúbico</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Grosseur grain</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Grain size</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="GER"><s0>Korngroesse</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Grosor grano</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Granulométrie</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Grain size analysis</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="GER"><s0>Teilchengroessenbestimmung</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Granulometría</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Valeur efficace</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Root mean square value</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Valor eficaz</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Transparence</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Transparency</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Transparencia</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Bande interdite</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Energy gap</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="GER"><s0>Energieluecke</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Banda prohibida</s0>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Effet Hall</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Hall effect</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="GER"><s0>Hall Effekt</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Efecto Hall</s0>
<s5>16</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>Température ambiante</s0>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="X" l="ENG"><s0>Room temperature</s0>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="X" l="GER"><s0>Raumtemperatur</s0>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="X" l="SPA"><s0>Temperatura ambiente</s0>
<s5>17</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>Conductivité électrique</s0>
<s5>18</s5>
</fC03>
<fC03 i1="18" i2="X" l="ENG"><s0>Electrical conductivity</s0>
<s5>18</s5>
</fC03>
<fC03 i1="18" i2="X" l="GER"><s0>Elektrische Leitfaehigkeit</s0>
<s5>18</s5>
</fC03>
<fC03 i1="18" i2="X" l="SPA"><s0>Conductividad eléctrica</s0>
<s5>18</s5>
</fC03>
<fC03 i1="19" i2="X" l="FRE"><s0>Densité porteur charge</s0>
<s5>19</s5>
</fC03>
<fC03 i1="19" i2="X" l="ENG"><s0>Charge carrier density</s0>
<s5>19</s5>
</fC03>
<fC03 i1="19" i2="X" l="SPA"><s0>Concentración portador carga</s0>
<s5>19</s5>
</fC03>
<fC03 i1="20" i2="X" l="FRE"><s0>Microscopie force atomique</s0>
<s5>20</s5>
</fC03>
<fC03 i1="20" i2="X" l="ENG"><s0>Atomic force microscopy</s0>
<s5>20</s5>
</fC03>
<fC03 i1="20" i2="X" l="SPA"><s0>Microscopía fuerza atómica</s0>
<s5>20</s5>
</fC03>
<fC03 i1="21" i2="X" l="FRE"><s0>Microscopie électronique balayage</s0>
<s5>21</s5>
</fC03>
<fC03 i1="21" i2="X" l="ENG"><s0>Scanning electron microscopy</s0>
<s5>21</s5>
</fC03>
<fC03 i1="21" i2="X" l="GER"><s0>Rasterelektronenmikroskopie</s0>
<s5>21</s5>
</fC03>
<fC03 i1="21" i2="X" l="SPA"><s0>Microscopía electrónica barrido</s0>
<s5>21</s5>
</fC03>
<fC03 i1="22" i2="X" l="FRE"><s0>Oxyde d'indium</s0>
<s5>22</s5>
</fC03>
<fC03 i1="22" i2="X" l="ENG"><s0>Indium oxide</s0>
<s5>22</s5>
</fC03>
<fC03 i1="22" i2="X" l="GER"><s0>Indiumoxid</s0>
<s5>22</s5>
</fC03>
<fC03 i1="22" i2="X" l="SPA"><s0>Indio óxido</s0>
<s5>22</s5>
</fC03>
<fC03 i1="23" i2="X" l="FRE"><s0>Sulfure d'indium</s0>
<s5>23</s5>
</fC03>
<fC03 i1="23" i2="X" l="ENG"><s0>Indium sulfide</s0>
<s5>23</s5>
</fC03>
<fC03 i1="23" i2="X" l="GER"><s0>Indiumsulfid</s0>
<s5>23</s5>
</fC03>
<fC03 i1="23" i2="X" l="SPA"><s0>Indio sulfuro</s0>
<s5>23</s5>
</fC03>
<fC03 i1="24" i2="X" l="FRE"><s0>Couche mince</s0>
<s5>24</s5>
</fC03>
<fC03 i1="24" i2="X" l="ENG"><s0>Thin film</s0>
<s5>24</s5>
</fC03>
<fC03 i1="24" i2="X" l="GER"><s0>Duennschicht</s0>
<s5>24</s5>
</fC03>
<fC03 i1="24" i2="X" l="SPA"><s0>Capa fina</s0>
<s5>24</s5>
</fC03>
<fC03 i1="25" i2="X" l="FRE"><s0>Indium</s0>
<s2>NC</s2>
<s5>25</s5>
</fC03>
<fC03 i1="25" i2="X" l="ENG"><s0>Indium</s0>
<s2>NC</s2>
<s5>25</s5>
</fC03>
<fC03 i1="25" i2="X" l="GER"><s0>Indium</s0>
<s2>NC</s2>
<s5>25</s5>
</fC03>
<fC03 i1="25" i2="X" l="SPA"><s0>Indio</s0>
<s2>NC</s2>
<s5>25</s5>
</fC03>
<fC03 i1="26" i2="3" l="FRE"><s0>Oxyde de silicium</s0>
<s2>NK</s2>
<s5>26</s5>
</fC03>
<fC03 i1="26" i2="3" l="ENG"><s0>Silicon oxides</s0>
<s2>NK</s2>
<s5>26</s5>
</fC03>
<fC03 i1="27" i2="X" l="FRE"><s0>Oxygène</s0>
<s2>NC</s2>
<s2>FX</s2>
<s5>27</s5>
</fC03>
<fC03 i1="27" i2="X" l="ENG"><s0>Oxygen</s0>
<s2>NC</s2>
<s2>FX</s2>
<s5>27</s5>
</fC03>
<fC03 i1="27" i2="X" l="GER"><s0>Sauerstoff</s0>
<s2>NC</s2>
<s2>FX</s2>
<s5>27</s5>
</fC03>
<fC03 i1="27" i2="X" l="SPA"><s0>Oxígeno</s0>
<s2>NC</s2>
<s2>FX</s2>
<s5>27</s5>
</fC03>
<fC03 i1="28" i2="X" l="FRE"><s0>Nanocristal</s0>
<s5>28</s5>
</fC03>
<fC03 i1="28" i2="X" l="ENG"><s0>Nanocrystal</s0>
<s5>28</s5>
</fC03>
<fC03 i1="28" i2="X" l="SPA"><s0>Nanocristal</s0>
<s5>28</s5>
</fC03>
<fC03 i1="29" i2="3" l="FRE"><s0>Réseau cubique</s0>
<s5>29</s5>
</fC03>
<fC03 i1="29" i2="3" l="ENG"><s0>Cubic lattices</s0>
<s5>29</s5>
</fC03>
<fC03 i1="30" i2="X" l="FRE"><s0>Matériau transparent</s0>
<s5>30</s5>
</fC03>
<fC03 i1="30" i2="X" l="ENG"><s0>Transparent material</s0>
<s5>30</s5>
</fC03>
<fC03 i1="30" i2="X" l="SPA"><s0>Material transparente</s0>
<s5>30</s5>
</fC03>
<fC03 i1="31" i2="X" l="FRE"><s0>Matériau cristallin</s0>
<s5>31</s5>
</fC03>
<fC03 i1="31" i2="X" l="ENG"><s0>Crystalline material</s0>
<s5>31</s5>
</fC03>
<fC03 i1="31" i2="X" l="SPA"><s0>Material cristalino</s0>
<s5>31</s5>
</fC03>
<fC03 i1="32" i2="3" l="FRE"><s0>Assemblage circuit intégré</s0>
<s5>46</s5>
</fC03>
<fC03 i1="32" i2="3" l="ENG"><s0>Integrated circuit bonding</s0>
<s5>46</s5>
</fC03>
<fC03 i1="33" i2="X" l="FRE"><s0>6146</s0>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="34" i2="X" l="FRE"><s0>7363</s0>
<s4>INC</s4>
<s5>57</s5>
</fC03>
<fC03 i1="35" i2="X" l="FRE"><s0>6837P</s0>
<s4>INC</s4>
<s5>58</s5>
</fC03>
<fC03 i1="36" i2="X" l="FRE"><s0>0779</s0>
<s4>INC</s4>
<s5>59</s5>
</fC03>
<fC03 i1="37" i2="X" l="FRE"><s0>In2O3</s0>
<s4>INC</s4>
<s5>82</s5>
</fC03>
<fC03 i1="38" i2="X" l="FRE"><s0>In2S3</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="39" i2="X" l="FRE"><s0>SiO2</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03>
<fC03 i1="40" i2="X" l="FRE"><s0>Pyrolyse par projection</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fC03 i1="40" i2="X" l="ENG"><s0>Spray pyrolysis</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fN21><s1>343</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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   |texte=   Properties of In2O3 films obtained by thermal oxidation of sprayed In2S3
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Properties of In2O3 films obtained by thermal oxidation of sprayed In2S3

Properties of In2O3 films obtained by thermal oxidation of sprayed In2S3

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English descriptors

Abstract

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